Datasheets
K7I161884B-FC16 by: Samsung Semiconductor

DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

Part Details for K7I161884B-FC16 by Samsung Semiconductor

Overview of K7I161884B-FC16 by Samsung Semiconductor

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Part Details for K7I161884B-FC16

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K7I161884B-FC16 Part Data Attributes

K7I161884B-FC16 Samsung Semiconductor
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K7I161884B-FC16 Samsung Semiconductor DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.5 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 166.66 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 18
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.14 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 13 mm

Alternate Parts for K7I161884B-FC16

This table gives cross-reference parts and alternative options found for K7I161884B-FC16. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I161884B-FC16, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MCM69L738ZP9R Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 Motorola Semiconductor Products K7I161884B-FC16 vs MCM69L738ZP9R
CXK77N36R160GB-3 Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Sony Semiconductor K7I161884B-FC16 vs CXK77N36R160GB-3
CY7C1345B-50AC Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Cypress Semiconductor K7I161884B-FC16 vs CY7C1345B-50AC
IS61DDP2B21M18A-550M3 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc K7I161884B-FC16 vs IS61DDP2B21M18A-550M3
CY7C1386FV25-250BGI Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 Cypress Semiconductor K7I161884B-FC16 vs CY7C1386FV25-250BGI
IS61QDPB21M18A-300B4 QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc K7I161884B-FC16 vs IS61QDPB21M18A-300B4
71V3576YS150BGGI Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 Integrated Device Technology Inc K7I161884B-FC16 vs 71V3576YS150BGGI
MT58LC128K36C5LG-10TR Cache SRAM, 128KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Micron Technology Inc K7I161884B-FC16 vs MT58LC128K36C5LG-10TR
HM6AEB18202BPL50 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 Renesas Electronics Corporation K7I161884B-FC16 vs HM6AEB18202BPL50
K7Q163682A-FC13 QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 Samsung Semiconductor K7I161884B-FC16 vs K7Q163682A-FC13

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