Part Details for 71V3576YS150BGGI by Integrated Device Technology Inc
Overview of 71V3576YS150BGGI by Integrated Device Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Space Technology
Industrial Automation
Computing and Data Storage
Aerospace and Defense
Renewable Energy
Robotics and Drones
Part Details for 71V3576YS150BGGI
71V3576YS150BGGI CAD Models
71V3576YS150BGGI Part Data Attributes
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71V3576YS150BGGI
Integrated Device Technology Inc
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Datasheet
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71V3576YS150BGGI
Integrated Device Technology Inc
Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTEGRATED DEVICE TECHNOLOGY INC | |
Part Package Code | BGA | |
Package Description | BGA, | |
Pin Count | 119 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 3.8 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
JESD-30 Code | R-PBGA-B119 | |
JESD-609 Code | e1 | |
Length | 22 mm | |
Memory Density | 4718592 bit | |
Memory IC Type | CACHE SRAM | |
Memory Width | 36 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 119 | |
Number of Words | 131072 words | |
Number of Words Code | 128000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 128KX36 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Parallel/Serial | PARALLEL | |
Qualification Status | Not Qualified | |
Seated Height-Max | 2.36 mm | |
Supply Voltage-Max (Vsup) | 3.465 V | |
Supply Voltage-Min (Vsup) | 3.135 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 1.27 mm | |
Terminal Position | BOTTOM | |
Width | 14 mm |
Alternate Parts for 71V3576YS150BGGI
This table gives cross-reference parts and alternative options found for 71V3576YS150BGGI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 71V3576YS150BGGI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MCM69L738ZP9R | Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | 71V3576YS150BGGI vs MCM69L738ZP9R |
CXK77N36R160GB-3 | Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Sony Semiconductor | 71V3576YS150BGGI vs CXK77N36R160GB-3 |
CY7C1345B-50AC | Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | 71V3576YS150BGGI vs CY7C1345B-50AC |
IS61DDP2B21M18A-550M3 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | 71V3576YS150BGGI vs IS61DDP2B21M18A-550M3 |
CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | 71V3576YS150BGGI vs CY7C1386FV25-250BGI |
IS61QDPB21M18A-300B4 | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | 71V3576YS150BGGI vs IS61QDPB21M18A-300B4 |
MT58LC128K36C5LG-10TR | Cache SRAM, 128KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Micron Technology Inc | 71V3576YS150BGGI vs MT58LC128K36C5LG-10TR |
HM6AEB18202BPL50 | 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 | Renesas Electronics Corporation | 71V3576YS150BGGI vs HM6AEB18202BPL50 |
K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | 71V3576YS150BGGI vs K7I161884B-FC16 |
K7Q163682A-FC13 | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 | Samsung Semiconductor | 71V3576YS150BGGI vs K7Q163682A-FC13 |