Part Details for IS61NVP25618A-200B2 by Integrated Silicon Solution Inc
Overview of IS61NVP25618A-200B2 by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS61NVP25618A-200B2
IS61NVP25618A-200B2 CAD Models
IS61NVP25618A-200B2 Part Data Attributes
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IS61NVP25618A-200B2
Integrated Silicon Solution Inc
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Datasheet
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IS61NVP25618A-200B2
Integrated Silicon Solution Inc
ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | BGA, BGA119,7X17,50 | |
| Pin Count | 119 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 3.1 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B119 | |
| JESD-609 Code | e0 | |
| Length | 22 mm | |
| Memory Density | 4718592 bit | |
| Memory IC Type | ZBT SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 119 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256KX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA119,7X17,50 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 2.41 mm | |
| Standby Current-Max | 0.03 A | |
| Standby Voltage-Min | 2.38 V | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 2.625 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | BOTTOM | |
| Width | 14 mm |
Alternate Parts for IS61NVP25618A-200B2
This table gives cross-reference parts and alternative options found for IS61NVP25618A-200B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61NVP25618A-200B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MCM69L738ZP9R | Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | IS61NVP25618A-200B2 vs MCM69L738ZP9R |
| CXK77N36R160GB-3 | Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Sony Semiconductor | IS61NVP25618A-200B2 vs CXK77N36R160GB-3 |
| CY7C1345B-50AC | Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | IS61NVP25618A-200B2 vs CY7C1345B-50AC |
| IS61DDP2B21M18A-550M3 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | IS61NVP25618A-200B2 vs IS61DDP2B21M18A-550M3 |
| CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | IS61NVP25618A-200B2 vs CY7C1386FV25-250BGI |
| IS61QDPB21M18A-300B4 | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | IS61NVP25618A-200B2 vs IS61QDPB21M18A-300B4 |
| 71V3576YS150BGGI | Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | IS61NVP25618A-200B2 vs 71V3576YS150BGGI |
| MT58LC128K36C5LG-10TR | Cache SRAM, 128KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Micron Technology Inc | IS61NVP25618A-200B2 vs MT58LC128K36C5LG-10TR |
| HM6AEB18202BPL50 | 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 | Renesas Electronics Corporation | IS61NVP25618A-200B2 vs HM6AEB18202BPL50 |
| K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | IS61NVP25618A-200B2 vs K7I161884B-FC16 |