Part Details for IS61DDP2B21M18A-550M3 by Integrated Silicon Solution Inc
Overview of IS61DDP2B21M18A-550M3 by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IS61DDP2B21M18A-550M3
IS61DDP2B21M18A-550M3 CAD Models
IS61DDP2B21M18A-550M3 Part Data Attributes
|
IS61DDP2B21M18A-550M3
Integrated Silicon Solution Inc
Buy Now
Datasheet
|
Compare Parts:
IS61DDP2B21M18A-550M3
Integrated Silicon Solution Inc
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | BGA | |
Package Description | LBGA, | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 18 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX18 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Seated Height-Max | 1.4 mm | |
Supply Voltage-Max (Vsup) | 1.89 V | |
Supply Voltage-Min (Vsup) | 1.71 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 15 mm |
Alternate Parts for IS61DDP2B21M18A-550M3
This table gives cross-reference parts and alternative options found for IS61DDP2B21M18A-550M3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDP2B21M18A-550M3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MCM69L738ZP9R | Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | IS61DDP2B21M18A-550M3 vs MCM69L738ZP9R |
CXK77N36R160GB-3 | Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Sony Semiconductor | IS61DDP2B21M18A-550M3 vs CXK77N36R160GB-3 |
CY7C1345B-50AC | Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | IS61DDP2B21M18A-550M3 vs CY7C1345B-50AC |
CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | IS61DDP2B21M18A-550M3 vs CY7C1386FV25-250BGI |
IS61QDPB21M18A-300B4 | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | IS61DDP2B21M18A-550M3 vs IS61QDPB21M18A-300B4 |
71V3576YS150BGGI | Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | IS61DDP2B21M18A-550M3 vs 71V3576YS150BGGI |
MT58LC128K36C5LG-10TR | Cache SRAM, 128KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Micron Technology Inc | IS61DDP2B21M18A-550M3 vs MT58LC128K36C5LG-10TR |
HM6AEB18202BPL50 | 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 | Renesas Electronics Corporation | IS61DDP2B21M18A-550M3 vs HM6AEB18202BPL50 |
K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | IS61DDP2B21M18A-550M3 vs K7I161884B-FC16 |
K7Q163682A-FC13 | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 | Samsung Semiconductor | IS61DDP2B21M18A-550M3 vs K7Q163682A-FC13 |