Datasheets
IRLMS1503TRPBF by:

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRLMS1503TRPBF by International Rectifier

Overview of IRLMS1503TRPBF by International Rectifier

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Price & Stock for IRLMS1503TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   3846
RFQ
Bristol Electronics   13459
RFQ
Quest Components MOSFET Transistor, N-Channel, TSOP 964
  • 1 $0.2211
  • 55 $0.1474
  • 340 $0.1179
$0.1179 / $0.2211 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 6924
  • 1 $0.7370
  • 1,810 $0.1474
  • 5,428 $0.1290
$0.1290 / $0.7370 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 2400
  • 1 $0.7370
  • 152 $0.2211
  • 1,810 $0.1474
$0.1474 / $0.7370 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 1382
  • 1 $0.9660
  • 116 $0.2898
  • 1,381 $0.1932
$0.1932 / $0.9660 Buy Now
Velocity Electronics Our Stock 9000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 3630
  • 1 $1.2300
  • 100 $0.9200
  • 1,000 $0.8000
$0.8000 / $1.2300 Buy Now
Sense Electronic Company Limited SOT-163 4575
RFQ

Part Details for IRLMS1503TRPBF

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IRLMS1503TRPBF Part Data Attributes:

IRLMS1503TRPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRLMS1503TRPBF International Rectifier Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.78 W
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLMS1503TRPBF

This table gives cross-reference parts and alternative options found for IRLMS1503TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1503TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503TRPBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503TR
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRLMS1503TRPBF vs IRLMS1503TR
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier IRLMS1503TRPBF vs IRLMS1503PBF
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503PBF
Part Number Description Manufacturer Compare
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRLMS1503TRPBF vs IRLMS1503TR
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503TR
BSP100 3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IRLMS1503TRPBF vs BSP100
BSP100-TAPE-7 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRLMS1503TRPBF vs BSP100-TAPE-7
BSP100,135 BSP100 - N-channel TrenchMOS intermediate level FET SC-73 4-Pin NXP Semiconductors IRLMS1503TRPBF vs BSP100,135
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503PBF
934033440135 3.2A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN NXP Semiconductors IRLMS1503TRPBF vs 934033440135
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN Infineon Technologies AG IRLMS1503TRPBF vs IRLMS1503TRPBF
BSP100 Power Field-Effect Transistor Nexperia IRLMS1503TRPBF vs BSP100
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier IRLMS1503TRPBF vs IRLMS1503PBF

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