Part Details for IRLMS1503TRPBF by International Rectifier
Overview of IRLMS1503TRPBF by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLMS1503TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3846 |
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RFQ | ||
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Bristol Electronics | 13459 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TSOP | 964 |
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$0.1179 / $0.2211 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TSOP | 6924 |
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$0.1290 / $0.7370 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TSOP | 2400 |
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$0.1474 / $0.7370 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TSOP | 1382 |
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$0.1932 / $0.9660 | Buy Now |
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Velocity Electronics | Our Stock | 9000 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 3630 |
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$0.8000 / $1.2300 | Buy Now |
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Sense Electronic Company Limited | SOT-163 | 4575 |
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RFQ |
Part Details for IRLMS1503TRPBF
IRLMS1503TRPBF CAD Models
IRLMS1503TRPBF Part Data Attributes:
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IRLMS1503TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLMS1503TRPBF
International Rectifier
Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.78 W | |
Power Dissipation-Max (Abs) | 1.7 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLMS1503TRPBF
This table gives cross-reference parts and alternative options found for IRLMS1503TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1503TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLMS1503TRPBF | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN | Infineon Technologies AG | IRLMS1503TRPBF vs IRLMS1503TRPBF |
IRLMS1503TR | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRLMS1503TRPBF vs IRLMS1503TR |
IRLMS1503TR | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRLMS1503TRPBF vs IRLMS1503TR |
IRLMS1503PBF | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | International Rectifier | IRLMS1503TRPBF vs IRLMS1503PBF |
IRLMS1503PBF | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | Infineon Technologies AG | IRLMS1503TRPBF vs IRLMS1503PBF |