Datasheets
BSP100 by:

3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BSP100 by NXP Semiconductors

Overview of BSP100 by NXP Semiconductors

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Applications Consumer Electronics Aerospace and Defense Healthcare Energy and Power Systems

Price & Stock for BSP100

Part # Distributor Description Stock Price Buy
ComSIT USA N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 3845
RFQ
Chip1Cloud N-channel enhancement mode TrenchMOS transistor 1590
RFQ

Part Details for BSP100

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BSP100 Part Data Attributes

BSP100 NXP Semiconductors
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BSP100 NXP Semiconductors 3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer NXP
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 5 W
Power Dissipation-Max (Abs) 8.3 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 75 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for BSP100

This table gives cross-reference parts and alternative options found for BSP100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP100-T TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP100 vs BSP100-T
Part Number Description Manufacturer Compare
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN Infineon Technologies AG BSP100 vs IRLMS1503TRPBF
BSP100-T TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP100 vs BSP100-T
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier BSP100 vs IRLMS1503TRPBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BSP100 vs IRLMS1503TR
IRLMS1503 Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier BSP100 vs IRLMS1503
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier BSP100 vs IRLMS1503PBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG BSP100 vs IRLMS1503TR

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