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BSP100 by:

Power Field-Effect Transistor

Part Details for BSP100 by Nexperia

Overview of BSP100 by Nexperia

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Applications Consumer Electronics Aerospace and Defense Healthcare Energy and Power Systems

Part Details for BSP100

BSP100 CAD Models

BSP100 Part Data Attributes

BSP100 Nexperia
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BSP100 Nexperia Power Field-Effect Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 23 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 54 pF
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 8.3 W
Pulsed Drain Current-Max (IDM) 24 A
Reference Standard IEC-134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSP100

This table gives cross-reference parts and alternative options found for BSP100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP100-T TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP100 vs BSP100-T
BSP100 3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors BSP100 vs BSP100
Part Number Description Manufacturer Compare
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN Infineon Technologies AG BSP100 vs IRLMS1503TRPBF
BSP100-T TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP100 vs BSP100-T
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier BSP100 vs IRLMS1503TRPBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BSP100 vs IRLMS1503TR
IRLMS1503 Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier BSP100 vs IRLMS1503
BSP100 3.5A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors BSP100 vs BSP100
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier BSP100 vs IRLMS1503PBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG BSP100 vs IRLMS1503TR

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