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Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH4434
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Newark | Mosfet, N-Ch, 30V, 3.2A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:3.2A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipation Rohs Compliant: Yes |Infineon IRLMS1503TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6875 |
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$0.2110 | Buy Now |
DISTI #
IRLMS1503PBFCT-ND
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DigiKey | MOSFET N-CH 30V 3.2A MICRO6 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
19165 In Stock |
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$0.1592 / $0.5500 | Buy Now |
DISTI #
IRLMS1503TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R - Tape and Reel (Alt: IRLMS1503TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 24000 |
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$0.1448 / $0.1654 | Buy Now |
DISTI #
IRLMS1503TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R - Tape and Reel (Alt: IRLMS1503TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
DISTI #
IRLMS1503TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R - Tape and Reel (Alt: IRLMS1503TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.1448 / $0.1654 | Buy Now |
DISTI #
942-IRLMS1503TRPBF
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Mouser Electronics | MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl RoHS: Compliant | 12487 |
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$0.1590 / $0.3600 | Buy Now |
DISTI #
E02:0323_00175252
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Arrow Electronics | Trans MOSFET N-CH Si 30V 3.2A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks | Europe - 18000 |
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$0.0794 | Buy Now |
DISTI #
V72:2272_13890260
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Arrow Electronics | Trans MOSFET N-CH Si 30V 3.2A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2210 Container: Cut Strips | Americas - 1070 |
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$0.1473 / $0.2383 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.2 Ohm 9.6 nC HEXFET® Power Mosfet - MICRO-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 3000Reel |
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$0.1560 / $0.1680 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.2 Ohm 9.6 nC HEXFET® Power Mosfet - MICRO-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 3000Reel |
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$0.0784 / $0.0881 | Buy Now |
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IRLMS1503TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLMS1503TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO6, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE, MICRO6, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLMS1503TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1503TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLMS1503 | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS1503TRPBF vs IRLMS1503 |
IRLMS1503TRPBF | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRLMS1503TRPBF vs IRLMS1503TRPBF |
IRLMS1503TR | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRLMS1503TRPBF vs IRLMS1503TR |
IRLMS1503TR | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRLMS1503TRPBF vs IRLMS1503TR |
IRLMS1503PBF | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | International Rectifier | IRLMS1503TRPBF vs IRLMS1503PBF |