Part Details for IRG4BC30WPBF by International Rectifier
Overview of IRG4BC30WPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4BC30WPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant | Europe - 2300 |
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RFQ |
Part Details for IRG4BC30WPBF
IRG4BC30WPBF CAD Models
IRG4BC30WPBF Part Data Attributes:
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IRG4BC30WPBF
International Rectifier
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Datasheet
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IRG4BC30WPBF
International Rectifier
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 23 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 100 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 300 ns | |
Turn-on Time-Nom (ton) | 41 ns |
Alternate Parts for IRG4BC30WPBF
This table gives cross-reference parts and alternative options found for IRG4BC30WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRG4BC30W | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC30WPBF vs IRG4BC30W |