Datasheets
HGTG11N120CN by:

43A, 1200V, N-CHANNEL IGBT, TO-247

Part Details for HGTG11N120CN by Intersil Corporation

Overview of HGTG11N120CN by Intersil Corporation

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Part Details for HGTG11N120CN

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HGTG11N120CN Part Data Attributes:

HGTG11N120CN Intersil Corporation
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HGTG11N120CN Intersil Corporation 43A, 1200V, N-CHANNEL IGBT, TO-247
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 43 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 230 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Rise Time-Max (tr) 16 ns
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 550 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTG11N120CN

This table gives cross-reference parts and alternative options found for HGTG11N120CN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG11N120CN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FGH50N6S2D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGTG11N120CN vs FGH50N6S2D
IRG4PH20KDPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTG11N120CN vs IRG4PH20KDPBF
HGT1S20N60C3RS 40A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTG11N120CN vs HGT1S20N60C3RS
MGY25N120D 38A, 1200V, N-CHANNEL IGBT, TO-264AA, TO-264, 3 PIN Motorola Mobility LLC HGTG11N120CN vs MGY25N120D
MGW12N120D 20A, 1200V, N-CHANNEL IGBT, TO-247AE Motorola Mobility LLC HGTG11N120CN vs MGW12N120D
HGTG12N60C3DR 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG11N120CN vs HGTG12N60C3DR
HGTP2N120CN 2A, 1200V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTG11N120CN vs HGTP2N120CN
IRG4BC20FDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGTG11N120CN vs IRG4BC20FDPBF
IRG4BC20W-SPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGTG11N120CN vs IRG4BC20W-SPBF
SGP15N60 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTG11N120CN vs SGP15N60

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