-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
600V, PT IGBT, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
23M6469
|
Newark | Igbt Single Transistor, General Purpose, 40 A, 1.8 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG20N60B3D Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$4.6800 / $6.3400 | Buy Now |
DISTI #
58K8902
|
Newark | Igbt, To-247, Continuous Collector Current:40A, Collector Emitter Saturation Voltage:1.8V, Power Dissipation:165W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:-, Msl:- Rohs Compliant: Yes |Onsemi HGTG20N60B3D Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
HGTG20N60B3D
onsemi
Buy Now
Datasheet
|
Compare Parts:
HGTG20N60B3D
onsemi
600V, PT IGBT, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 340CK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 41 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 360 ns | |
Turn-on Time-Nom (ton) | 45 ns |
This table gives cross-reference parts and alternative options found for HGTG20N60B3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60B3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HGTG20N60B3D_NL | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTG20N60B3D vs HGTG20N60B3D_NL |
HGTG20N60B3D | 40A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG20N60B3D vs HGTG20N60B3D |
HGTG20N60B3D | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247, | Fairchild Semiconductor Corporation | HGTG20N60B3D vs HGTG20N60B3D |