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600V, PT IGBT, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K1593
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Newark | Igbt, n Channel,600V,63A, to-247, Continuous Collector Current:63A, Collector Emitter Saturation Voltage:1.5V, Power Dissipation:208W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Onsemi HGTG30N60C3D Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
HGTG30N60C3D
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Avnet Americas | Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 120 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 900 Partner Stock |
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$5.1708 / $6.1716 | Buy Now |
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Flip Electronics | Stock, ship today | 900 |
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$4.1700 | RFQ |
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HGTG30N60C3D
onsemi
Buy Now
Datasheet
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Compare Parts:
HGTG30N60C3D
onsemi
600V, PT IGBT, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 340CK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 63 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 550 ns | |
Turn-on Time-Nom (ton) | 85 ns |
This table gives cross-reference parts and alternative options found for HGTG30N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGTG30N60C3D | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247, | Fairchild Semiconductor Corporation | HGTG30N60C3D vs HGTG30N60C3D |
HGTG30N60C3D | 63A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG30N60C3D vs HGTG30N60C3D |