Part Details for IRFY044 by International Rectifier
Overview of IRFY044 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFY044
IRFY044 CAD Models
IRFY044 Part Data Attributes:
|
|
IRFY044
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRFY044
International Rectifier
Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-257AA | |
| Package Description | FLANGE MOUNT, S-XSFM-P3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | S-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 153 ns |
Alternate Parts for IRFY044
This table gives cross-reference parts and alternative options found for IRFY044. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY044, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY044 | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | Infineon Technologies AG | IRFY044 vs IRFY044 |
| IRFY044 | 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFY044 vs IRFY044 |
| IRFY044C | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | Infineon Technologies AG | IRFY044 vs IRFY044C |
| IRFY044R1 | 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFY044 vs IRFY044R1 |
| IRFY044R1 | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFY044 vs IRFY044R1 |
| IRFY044C | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | International Rectifier | IRFY044 vs IRFY044C |
| IRFY044 | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFY044 vs IRFY044 |
| IRFY044C | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, Silicon, Metal-oxide Semiconductor FET, TO-220MC | TT Electronics Resistors | IRFY044 vs IRFY044C |