Datasheets
IRFY044-QR-EB by:

20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for IRFY044-QR-EB by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFY044-QR-EB by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for IRFY044-QR-EB

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IRFY044-QR-EB Part Data Attributes

IRFY044-QR-EB TT Electronics Power and Hybrid / Semelab Limited
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IRFY044-QR-EB TT Electronics Power and Hybrid / Semelab Limited 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFY044-QR-EB

This table gives cross-reference parts and alternative options found for IRFY044-QR-EB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY044-QR-EB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY044MEAPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY044-QR-EB vs IRFY044MEAPBF
IRFY044R1 Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY044-QR-EB vs IRFY044R1
IRFY044EDPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY044-QR-EB vs IRFY044EDPBF
IRFY044E Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY044-QR-EB vs IRFY044E
IRFY044C-JQR-B 20A, 60V, 0.035ohm, Si, POWER, MOSFET, TO-220MC TT Electronics Power and Hybrid / Semelab Limited IRFY044-QR-EB vs IRFY044C-JQR-B
IRFY044MEAPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY044-QR-EB vs IRFY044MEAPBF
IRFY044CM Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN Infineon Technologies AG IRFY044-QR-EB vs IRFY044CM
IRFY044EBPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY044-QR-EB vs IRFY044EBPBF
IRFY044-QR 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY044-QR-EB vs IRFY044-QR
IRFY044MR1 16A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY044-QR-EB vs IRFY044MR1

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