Datasheets
IRFY044ED by: International Rectifier

Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

Part Details for IRFY044ED by International Rectifier

Overview of IRFY044ED by International Rectifier

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Part Details for IRFY044ED

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IRFY044ED Part Data Attributes

IRFY044ED International Rectifier
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IRFY044ED International Rectifier Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AB
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 153 ns

Alternate Parts for IRFY044ED

This table gives cross-reference parts and alternative options found for IRFY044ED. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY044ED, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY044MEAPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY044ED vs IRFY044MEAPBF
IRFY044R1 Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY044ED vs IRFY044R1
IRFY044EDPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY044ED vs IRFY044EDPBF
IRFY044E Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY044ED vs IRFY044E
IRFY044C-JQR-B 20A, 60V, 0.035ohm, Si, POWER, MOSFET, TO-220MC TT Electronics Power and Hybrid / Semelab Limited IRFY044ED vs IRFY044C-JQR-B
IRFY044MEAPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY044ED vs IRFY044MEAPBF
IRFY044CM Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN Infineon Technologies AG IRFY044ED vs IRFY044CM
IRFY044EBPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY044ED vs IRFY044EBPBF
IRFY044-QR 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY044ED vs IRFY044-QR
IRFY044MR1 16A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY044ED vs IRFY044MR1

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