Datasheets
SHD219401 by: Sensitron Semiconductors

Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-3

Part Details for SHD219401 by Sensitron Semiconductors

Overview of SHD219401 by Sensitron Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SHD219401

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SHD219401 Part Data Attributes

SHD219401 Sensitron Semiconductors
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SHD219401 Sensitron Semiconductors Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SENSITRON SEMICONDUCTOR
Part Package Code DLCC
Package Description SMALL OUTLINE, R-CDSO-N3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CDSO-N3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SHD219401

This table gives cross-reference parts and alternative options found for SHD219401. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SHD219401, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY044MEAPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier SHD219401 vs IRFY044MEAPBF
IRFY044R1 Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors SHD219401 vs IRFY044R1
IRFY044EDPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier SHD219401 vs IRFY044EDPBF
IRFY044E Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG SHD219401 vs IRFY044E
IRFY044C-JQR-B 20A, 60V, 0.035ohm, Si, POWER, MOSFET, TO-220MC TT Electronics Power and Hybrid / Semelab Limited SHD219401 vs IRFY044C-JQR-B
IRFY044MEAPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG SHD219401 vs IRFY044MEAPBF
IRFY044CM Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN Infineon Technologies AG SHD219401 vs IRFY044CM
IRFY044EBPBF 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG SHD219401 vs IRFY044EBPBF
IRFY044-QR 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited SHD219401 vs IRFY044-QR
IRFY044MR1 16A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited SHD219401 vs IRFY044MR1

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