Part Details for IRFY044 by Infineon Technologies AG
Overview of IRFY044 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFY044
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFY044
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Avnet Americas | Transistor MOSFET N-Channel 60V 16A 3-Pin TO-257AA - Bulk (Alt: IRFY044) Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for IRFY044
IRFY044 CAD Models
IRFY044 Part Data Attributes
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IRFY044
Infineon Technologies AG
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Datasheet
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IRFY044
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, TO-257AA, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | S-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFY044
This table gives cross-reference parts and alternative options found for IRFY044. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY044, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY044C | 20A, 60V, 0.035ohm, Si, POWER, MOSFET, TO-220MC | TT Electronics Power and Hybrid / Semelab Limited | IRFY044 vs IRFY044C |
| IRFY044C | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, Silicon, Metal-oxide Semiconductor FET, TO-220MC | TT Electronics Resistors | IRFY044 vs IRFY044C |
| IRFY044C | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | Infineon Technologies AG | IRFY044 vs IRFY044C |
| IRFY044 | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFY044 vs IRFY044 |
| IRFY044C | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | International Rectifier | IRFY044 vs IRFY044C |
| IRFY044R1 | Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRFY044 vs IRFY044R1 |
| IRFY044R1 | 20A, 60V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFY044 vs IRFY044R1 |
| IRFY044 | Power Field-Effect Transistor, 16A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | International Rectifier | IRFY044 vs IRFY044 |