Part Details for IRFF110 by Harris Semiconductor
Overview of IRFF110 by Harris Semiconductor
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- Part Data Attributes
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Part Details for IRFF110
IRFF110 CAD Models
IRFF110 Part Data Attributes
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IRFF110
Harris Semiconductor
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Datasheet
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IRFF110
Harris Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 15 W | |
Power Dissipation-Max (Abs) | 15 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 45 ns | |
Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for IRFF110
This table gives cross-reference parts and alternative options found for IRFF110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6782-QR | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782-QR |
JANTX2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | IRFF110 vs JANTX2N6782 |
2N6782.MOD | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF110 vs 2N6782.MOD |
2N6782-QR-BR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782-QR-BR1 |
2N6782-JQR-BR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782-JQR-BR1 |
JANTXV2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF110 vs JANTXV2N6782 |
2N6782.MODR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782.MODR1 |
IRFF110 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF110 vs IRFF110 |
IRFF110 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF110 vs IRFF110 |
2N6782.MODR1 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF110 vs 2N6782.MODR1 |