Datasheets
IRLF110 by: International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for IRLF110 by International Rectifier

Overview of IRLF110 by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRLF110

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IRLF110 Part Data Attributes:

IRLF110 International Rectifier
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IRLF110 International Rectifier Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRLF110

This table gives cross-reference parts and alternative options found for IRLF110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLF110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6782.MODR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRLF110 vs 2N6782.MODR1
2N6782-JQR-BR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors IRLF110 vs 2N6782-JQR-BR1
2N6782TXV 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRLF110 vs 2N6782TXV
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation IRLF110 vs 2N6782
IRFF110 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 Motorola Mobility LLC IRLF110 vs IRFF110
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRLF110 vs 2N6782.MODR1
2N6782-JQR-B Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors IRLF110 vs 2N6782-JQR-B
2N6782-JQR-A 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRLF110 vs 2N6782-JQR-A
2N6782-QR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRLF110 vs 2N6782-QR-B
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRLF110 vs IRFF110
Part Number Description Manufacturer Compare
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation IRLF110 vs 2N6782
JAN2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation IRLF110 vs JAN2N6782
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRLF110 vs IRFF110
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRLF110 vs 2N6782.MODR1
JANTXV2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation IRLF110 vs JANTXV2N6782
2N6782TXV Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRLF110 vs 2N6782TXV
2N6782-QR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRLF110 vs 2N6782-QR-B
JANTX2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG IRLF110 vs JANTX2N6782
2N6782.MODR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRLF110 vs 2N6782.MODR1
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation IRLF110 vs 2N6782

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