Part Details for JANTX2N6782 by Infineon Technologies AG
Overview of JANTX2N6782 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6782
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | Single N-Channel 100 V 15 W 6.5 nC Hexfet Transistor Through Hole - TO-39 RoHS: Non Compliant pbFree: No Min Qty: 250 Package Multiple: 1 Container: Tray | 0Tray |
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$13.4700 / $14.1400 | Buy Now |
Part Details for JANTX2N6782
JANTX2N6782 CAD Models
JANTX2N6782 Part Data Attributes:
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JANTX2N6782
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
JANTX2N6782
Infineon Technologies AG
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.69 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 15 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/556 | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6782
This table gives cross-reference parts and alternative options found for JANTX2N6782. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6782, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6782-JQR-B | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782 vs 2N6782-JQR-B |
IRFF110-JQR-B | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782 vs IRFF110-JQR-B |
2N6782R1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6782 vs 2N6782R1 |
IRLF110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | JANTX2N6782 vs IRLF110 |
2N6782-QRR1 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782 vs 2N6782-QRR1 |
2N6782-QR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6782 vs 2N6782-QR-B |
JAN2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN | Microsemi Corporation | JANTX2N6782 vs JAN2N6782 |
2N6782 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | Motorola Mobility LLC | JANTX2N6782 vs 2N6782 |
2N6782-JQR-BR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6782 vs 2N6782-JQR-BR1 |
2N6782TXV | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Fairchild Semiconductor Corporation | JANTX2N6782 vs 2N6782TXV |