Part Details for JAN2N6782 by Unitrode Corporation
Overview of JAN2N6782 by Unitrode Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for JAN2N6782
JAN2N6782 CAD Models
JAN2N6782 Part Data Attributes:
|
|
JAN2N6782
Unitrode Corporation
Buy Now
Datasheet
|
Compare Parts:
JAN2N6782
Unitrode Corporation
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | UNITRODE CORP | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.8 W | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 45 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for JAN2N6782
This table gives cross-reference parts and alternative options found for JAN2N6782. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6782, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6782.MODR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6782 vs 2N6782.MODR1 |
| 2N6782-JQR-BR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6782 vs 2N6782-JQR-BR1 |
| 2N6782TXV | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JAN2N6782 vs 2N6782TXV |
| 2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN | Microsemi Corporation | JAN2N6782 vs 2N6782 |
| IRFF110 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | Motorola Mobility LLC | JAN2N6782 vs IRFF110 |
| 2N6782.MODR1 | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6782 vs 2N6782.MODR1 |
| 2N6782-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6782 vs 2N6782-JQR-B |
| 2N6782-JQR-A | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6782 vs 2N6782-JQR-A |
| 2N6782-QR-B | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6782 vs 2N6782-QR-B |
| IRFF110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JAN2N6782 vs IRFF110 |