Datasheets
2N6782-QR-BR1 by:

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN

Part Details for 2N6782-QR-BR1 by TT Electronics Resistors

Overview of 2N6782-QR-BR1 by TT Electronics Resistors

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Part Details for 2N6782-QR-BR1

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2N6782-QR-BR1 Part Data Attributes:

2N6782-QR-BR1 TT Electronics Resistors
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2N6782-QR-BR1 TT Electronics Resistors Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N6782-QR-BR1

This table gives cross-reference parts and alternative options found for 2N6782-QR-BR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6782-QR-BR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6782.MODR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6782-QR-BR1 vs 2N6782.MODR1
2N6782-JQR-BR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors 2N6782-QR-BR1 vs 2N6782-JQR-BR1
2N6782TXV 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6782-QR-BR1 vs 2N6782TXV
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation 2N6782-QR-BR1 vs 2N6782
IRFF110 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 Motorola Mobility LLC 2N6782-QR-BR1 vs IRFF110
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6782-QR-BR1 vs 2N6782.MODR1
2N6782-JQR-B Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors 2N6782-QR-BR1 vs 2N6782-JQR-B
2N6782-JQR-A 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6782-QR-BR1 vs 2N6782-JQR-A
2N6782-QR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6782-QR-BR1 vs 2N6782-QR-B
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6782-QR-BR1 vs IRFF110
Part Number Description Manufacturer Compare
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation 2N6782-QR-BR1 vs 2N6782
JAN2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation 2N6782-QR-BR1 vs JAN2N6782
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6782-QR-BR1 vs IRFF110
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6782-QR-BR1 vs 2N6782.MODR1
JANTXV2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation 2N6782-QR-BR1 vs JANTXV2N6782
2N6782TXV Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6782-QR-BR1 vs 2N6782TXV
2N6782-QR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6782-QR-BR1 vs 2N6782-QR-B
JANTX2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG 2N6782-QR-BR1 vs JANTX2N6782
2N6782.MODR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6782-QR-BR1 vs 2N6782.MODR1
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation 2N6782-QR-BR1 vs 2N6782

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