Parametric results for: IRFF110 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 HIGH INPUT IMPEDANCE 1

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19.0 mJ 4 68.0 mJ 2

Min (mJ) - Max (mJ)

29 hits Apply

DRAIN 7

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Configuration (3)

SINGLE 17 Single 1 SINGLE WITH BUILT-IN DIODE 9

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DS Breakdown Voltage-Min (2)

80 V 3 100 V 21

Min (V) - Max (V)

29 hits Apply

Drain Current-Max (Abs) (ID) (1)

3.5 A 1

29 hits Apply

Drain Current-Max (ID) (3)

3.5 A 21 12 A 4 14 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

600 mΩ 15 690 mΩ 2

Min (Ω) - Max (Ω)

29 hits Apply

METAL-OXIDE SEMICONDUCTOR 27

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25 pF 2

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TO-205AF 15 TO-39 2

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O-MBCY-W3 17

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e0 10 e1 4

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Manufacturer (13)

Fairchild Semiconductor Corporation 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 1 International Rectifier 2 Intersil Corporation 2 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 7 Thomson Consumer Electronics 2 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4

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Number of Elements (1)

1 26

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Number of Terminals (1)

3 17

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ENHANCEMENT MODE 27

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150.0 °C 11

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METAL 17

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ROUND 17

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CYLINDRICAL 17

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Active 12 Contact Manufacturer 3 Obsolete 11 Transferred 3

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No 3 Yes 3

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NOT SPECIFIED 6

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Polarity/Channel Type (1)

N-CHANNEL 27

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15 W 5

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15 W 9

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Surface Mount (1)

NO 20

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