Datasheets
IRF840STRLPBF by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRF840STRLPBF by Vishay Siliconix

Overview of IRF840STRLPBF by Vishay Siliconix

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Price & Stock for IRF840STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF840STRLPBFCT-ND
DigiKey MOSFET N-CH 500V 8A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1379
In Stock
  • 1 $2.7400
  • 10 $2.2770
  • 100 $1.8119
  • 800 $1.5332
  • 1,600 $1.3009
  • 2,400 $1.2358
  • 5,600 $1.1894
$1.1894 / $2.7400 Buy Now
New Advantage Corporation Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant Min Qty: 1 Package Multiple: 800 8000
  • 800 $0.9857
  • 8,000 $0.9200
$0.9200 / $0.9857 Buy Now

Part Details for IRF840STRLPBF

IRF840STRLPBF CAD Models

IRF840STRLPBF Part Data Attributes

IRF840STRLPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF840STRLPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840STRLPBF

This table gives cross-reference parts and alternative options found for IRF840STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF840STRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF840STRLPBF vs IRF840STRRPBF
IRF840SPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF840STRLPBF vs IRF840SPBF
IRF840STRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840STRLPBF vs IRF840STRLPBF
Part Number Description Manufacturer Compare
2SK1316(S)TR Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd IRF840STRLPBF vs 2SK1316(S)TR
2SK1541(S)TL 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation IRF840STRLPBF vs 2SK1541(S)TL
PHB8N50E TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power NXP Semiconductors IRF840STRLPBF vs PHB8N50E
2SK1540(S)TR Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd IRF840STRLPBF vs 2SK1540(S)TR
IRF840ASPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840STRLPBF vs IRF840ASPBF
IRF840SPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840STRLPBF vs IRF840SPBF
MTB8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 onsemi IRF840STRLPBF vs MTB8N50E
FS10VS-10 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric IRF840STRLPBF vs FS10VS-10
FS10VS-10 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors IRF840STRLPBF vs FS10VS-10
2SK1504-01L Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fuji Electric Co Ltd IRF840STRLPBF vs 2SK1504-01L

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