Part Details for HGT1S20N35G3VLS by Fairchild Semiconductor Corporation
Overview of HGT1S20N35G3VLS by Fairchild Semiconductor Corporation
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Applications
Energy and Power Systems
Renewable Energy
Part Details for HGT1S20N35G3VLS
HGT1S20N35G3VLS CAD Models
HGT1S20N35G3VLS Part Data Attributes
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HGT1S20N35G3VLS
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S20N35G3VLS
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263AB, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 320 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Gate-Emitter Thr Voltage-Max | 2.3 V | |
| Gate-Emitter Voltage-Max | 12 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | AUTOMOTIVE IGNITION | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 15000 ns |
Alternate Parts for HGT1S20N35G3VLS
This table gives cross-reference parts and alternative options found for HGT1S20N35G3VLS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N35G3VLS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S20N35G3VLS | 20A, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S20N35G3VLS vs HGT1S20N35G3VLS |
| HGT1S20N35G3VLS9A | 20A, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S20N35G3VLS vs HGT1S20N35G3VLS9A |
| HGT1S20N35G3VLS9A | Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | HGT1S20N35G3VLS vs HGT1S20N35G3VLS9A |