Datasheets
HGT1S20N35G3VLS by:

20A, N-CHANNEL IGBT, TO-263AB

Part Details for HGT1S20N35G3VLS by Intersil Corporation

Overview of HGT1S20N35G3VLS by Intersil Corporation

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Applications Energy and Power Systems Renewable Energy

Part Details for HGT1S20N35G3VLS

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HGT1S20N35G3VLS Part Data Attributes:

HGT1S20N35G3VLS Intersil Corporation
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HGT1S20N35G3VLS Intersil Corporation 20A, N-CHANNEL IGBT, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 380 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-Emitter Thr Voltage-Max 2.3 V
Gate-Emitter Voltage-Max 10 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON

Alternate Parts for HGT1S20N35G3VLS

This table gives cross-reference parts and alternative options found for HGT1S20N35G3VLS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N35G3VLS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S20N35G3VLS Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HGT1S20N35G3VLS vs HGT1S20N35G3VLS
Part Number Description Manufacturer Compare
ISL9V5036S3ST IGBT, 360V, 31A, 1.17V, 500mJ, D2PAK EcoSPARK® II, N-Channel Ignition, 800-REEL, Automotive Qualified onsemi HGT1S20N35G3VLS vs ISL9V5036S3ST
ISL9V5036S3S Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation HGT1S20N35G3VLS vs ISL9V5036S3S
ISL9V5036S3S_NL Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation HGT1S20N35G3VLS vs ISL9V5036S3S_NL
ISL9V5036S3STS62Z Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Fairchild Semiconductor Corporation HGT1S20N35G3VLS vs ISL9V5036S3STS62Z
HGT1S20N35G3VLS Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HGT1S20N35G3VLS vs HGT1S20N35G3VLS

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