Datasheets
CM30TF-24H by:

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel

Part Details for CM30TF-24H by Mitsubishi Electric

Overview of CM30TF-24H by Mitsubishi Electric

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Part Details for CM30TF-24H

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CM30TF-24H Part Data Attributes:

CM30TF-24H Mitsubishi Electric
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CM30TF-24H Mitsubishi Electric Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-XUFM-D17
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature SUPER FAST RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-D17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 150 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3.4 V

Alternate Parts for CM30TF-24H

This table gives cross-reference parts and alternative options found for CM30TF-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM30TF-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors CM30TF-24H vs CM30TF-24H
Part Number Description Manufacturer Compare
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors CM30TF-24H vs CM30TF-24H
6MBI25F-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN Fuji Electric Co Ltd CM30TF-24H vs 6MBI25F-120
6MBI25LB-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN Fuji Electric Co Ltd CM30TF-24H vs 6MBI25LB-120
6MBI25L-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN Fuji Electric Co Ltd CM30TF-24H vs 6MBI25L-120
MG25Q6ES1 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM30TF-24H vs MG25Q6ES1
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120DN2E3224
BSM25GD120D2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120D2
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120DN2
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG CM30TF-24H vs BSM25GD120DN2E3224

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