Part Details for 6MBI25F-120 by Fuji Electric Co Ltd
Overview of 6MBI25F-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 6MBI25F-120
6MBI25F-120 CAD Models
6MBI25F-120 Part Data Attributes:
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6MBI25F-120
Fuji Electric Co Ltd
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Datasheet
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6MBI25F-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X19 | |
| Pin Count | 19 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SATURATION VOLTAGE | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| JESD-30 Code | R-XUFM-X19 | |
| Number of Elements | 6 | |
| Number of Terminals | 19 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1500 ns | |
| Turn-on Time-Nom (ton) | 800 ns |
Alternate Parts for 6MBI25F-120
This table gives cross-reference parts and alternative options found for 6MBI25F-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 6MBI25F-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | 6MBI25F-120 vs BSM25GD120DN2 |
| MG25Q6ES50A | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 6MBI25F-120 vs MG25Q6ES50A |
| BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | 6MBI25F-120 vs BSM25GD120DN2 |
| 6MBI25LB-120 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | 6MBI25F-120 vs 6MBI25LB-120 |
| BSM25GD120D2 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | 6MBI25F-120 vs BSM25GD120D2 |
| BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | 6MBI25F-120 vs BSM25GD120DN2E3224 |
| BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | 6MBI25F-120 vs BSM25GD120DN2E3224 |
| MG25Q6ES50 | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 6MBI25F-120 vs MG25Q6ES50 |
| BSM25GD120D2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | 6MBI25F-120 vs BSM25GD120D2 |
| CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | 6MBI25F-120 vs CM30TF-24H |