Part Details for BSM25GD120DN2E3224 by Infineon Technologies AG
Overview of BSM25GD120DN2E3224 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSM25GD120DN2E3224
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSM25GD120DN2E3224
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Avnet Americas | Transistor IGBT Module N-CH 1200V 35A 20V Screw Mount T/R - Trays (Alt: BSM25GD120DN2E3224) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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RFQ | |
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DISTI #
BSM25GD120DN2E3224
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Avnet Americas | Transistor IGBT Module N-CH 1200V 35A 20V Screw Mount T/R - Trays (Alt: BSM25GD120DN2E3224) RoHS: Not Compliant Min Qty: 15 Package Multiple: 15 Container: Tray | 0 |
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RFQ | |
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Bristol Electronics | 740 |
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RFQ |
Part Details for BSM25GD120DN2E3224
BSM25GD120DN2E3224 CAD Models
BSM25GD120DN2E3224 Part Data Attributes:
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BSM25GD120DN2E3224
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSM25GD120DN2E3224
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ECONOPACK-17 | |
| Pin Count | 17 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 450 ns | |
| Turn-on Time-Nom (ton) | 140 ns | |
| VCEsat-Max | 3.2 V |
Alternate Parts for BSM25GD120DN2E3224
This table gives cross-reference parts and alternative options found for BSM25GD120DN2E3224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120DN2E3224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM25GD120DN2E3224 vs BSM25GD120DN2E3224 |