Datasheets
BSM25GD120DN2E3224 by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

Part Details for BSM25GD120DN2E3224 by Infineon Technologies AG

Overview of BSM25GD120DN2E3224 by Infineon Technologies AG

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Price & Stock for BSM25GD120DN2E3224

Part # Distributor Description Stock Price Buy
DISTI # BSM25GD120DN2E3224
Avnet Americas Transistor IGBT Module N-CH 1200V 35A 20V Screw Mount T/R - Trays (Alt: BSM25GD120DN2E3224) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ
DISTI # BSM25GD120DN2E3224
Avnet Americas Transistor IGBT Module N-CH 1200V 35A 20V Screw Mount T/R - Trays (Alt: BSM25GD120DN2E3224) RoHS: Not Compliant Min Qty: 15 Package Multiple: 15 Container: Tray 0
RFQ
Bristol Electronics   740
RFQ

Part Details for BSM25GD120DN2E3224

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BSM25GD120DN2E3224 Part Data Attributes

BSM25GD120DN2E3224 Infineon Technologies AG
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BSM25GD120DN2E3224 Infineon Technologies AG Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ECONOPACK-17
Pin Count 17
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 140 ns
VCEsat-Max 3.2 V

Alternate Parts for BSM25GD120DN2E3224

This table gives cross-reference parts and alternative options found for BSM25GD120DN2E3224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120DN2E3224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSM25GD120D2 Siemens Check for Price Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel BSM25GD120DN2E3224 vs BSM25GD120D2
6MBI25F-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN BSM25GD120DN2E3224 vs 6MBI25F-120
BSM25GD120DN2E3224 Siemens Check for Price Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel BSM25GD120DN2E3224 vs BSM25GD120DN2E3224
6MBI25LB-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN BSM25GD120DN2E3224 vs 6MBI25LB-120
6MBI25L-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN BSM25GD120DN2E3224 vs 6MBI25L-120
BSM25GD120D2 Eupec Gmbh & Co Kg Check for Price Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, BSM25GD120DN2E3224 vs BSM25GD120D2

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