Datasheets
BSM25GD120DN2E3224 by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

Part Details for BSM25GD120DN2E3224 by Siemens

Overview of BSM25GD120DN2E3224 by Siemens

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Part Details for BSM25GD120DN2E3224

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BSM25GD120DN2E3224 Part Data Attributes:

BSM25GD120DN2E3224 Siemens
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BSM25GD120DN2E3224 Siemens Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-CUFM-T17
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-CUFM-T17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1200 W
Qualification Status Not Qualified
Rise Time-Max (tr) 130 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 600 ns
Turn-off Time-Nom (toff) 400 ns
Turn-on Time-Max (ton) 150 ns
Turn-on Time-Nom (ton) 75 ns
VCEsat-Max 3 V

Alternate Parts for BSM25GD120DN2E3224

This table gives cross-reference parts and alternative options found for BSM25GD120DN2E3224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120DN2E3224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM25GD120DN2E3224 vs BSM25GD120DN2E3224
Part Number Description Manufacturer Compare
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens BSM25GD120DN2E3224 vs BSM25GD120DN2
MG25Q6ES50A TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM25GD120DN2E3224 vs MG25Q6ES50A
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM25GD120DN2E3224 vs BSM25GD120DN2
6MBI25LB-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN Fuji Electric Co Ltd BSM25GD120DN2E3224 vs 6MBI25LB-120
BSM25GD120D2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, Eupec Gmbh & Co Kg BSM25GD120DN2E3224 vs BSM25GD120D2
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM25GD120DN2E3224 vs BSM25GD120DN2E3224
MG25Q6ES50 TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM25GD120DN2E3224 vs MG25Q6ES50
BSM25GD120D2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens BSM25GD120DN2E3224 vs BSM25GD120D2
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Mitsubishi Electric BSM25GD120DN2E3224 vs CM30TF-24H
6MBI25F-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN Fuji Electric Co Ltd BSM25GD120DN2E3224 vs 6MBI25F-120

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