Part Details for MG25Q6ES1 by Toshiba America Electronic Components
Overview of MG25Q6ES1 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG25Q6ES1
MG25Q6ES1 CAD Models
MG25Q6ES1 Part Data Attributes:
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MG25Q6ES1
Toshiba America Electronic Components
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Datasheet
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MG25Q6ES1
Toshiba America Electronic Components
TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Number of Elements | 6 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Transistor Element Material | SILICON |
Alternate Parts for MG25Q6ES1
This table gives cross-reference parts and alternative options found for MG25Q6ES1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG25Q6ES1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | MG25Q6ES1 vs BSM25GD120DN2 |
| MG25Q6ES50A | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG25Q6ES1 vs MG25Q6ES50A |
| BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | MG25Q6ES1 vs BSM25GD120DN2 |
| 6MBI25LB-120 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | MG25Q6ES1 vs 6MBI25LB-120 |
| BSM25GD120D2 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | MG25Q6ES1 vs BSM25GD120D2 |
| BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | MG25Q6ES1 vs BSM25GD120DN2E3224 |
| BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | MG25Q6ES1 vs BSM25GD120DN2E3224 |
| MG25Q6ES50 | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG25Q6ES1 vs MG25Q6ES50 |
| BSM25GD120D2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | MG25Q6ES1 vs BSM25GD120D2 |
| CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG25Q6ES1 vs CM30TF-24H |