Part Details for CJD112 by Central Semiconductor Corp
Overview of CJD112 by Central Semiconductor Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CJD112
CJD112 CAD Models
CJD112 Part Data Attributes:
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CJD112
Central Semiconductor Corp
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Datasheet
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CJD112
Central Semiconductor Corp
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 20 W | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz | |
VCEsat-Max | 2 V |
Alternate Parts for CJD112
This table gives cross-reference parts and alternative options found for CJD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CJD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MJD112T4 | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | CJD112 vs MJD112T4 |
NJVMJD112G | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified | onsemi | CJD112 vs NJVMJD112G |
MJD112RLG | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL | onsemi | CJD112 vs MJD112RLG |
MJD112 | 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | STMicroelectronics | CJD112 vs MJD112 |
MJD112-T1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | CJD112 vs MJD112-T1 |
MJD112G | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | CJD112 vs MJD112G |