Datasheets
BLF245B by:

TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power

Part Details for BLF245B by NXP Semiconductors

Overview of BLF245B by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems Renewable Energy Telecommunications Entertainment and Gaming

Part Details for BLF245B

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BLF245B Part Data Attributes

BLF245B NXP Semiconductors
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BLF245B NXP Semiconductors TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description SOT-279A, 4 PIN
Pin Count 4
Manufacturer Package Code SOT279A
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Power Gain-Min (Gp) 14 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF245B

This table gives cross-reference parts and alternative options found for BLF245B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF245B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF137 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity BLF245B vs MRF137
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM BLF245B vs MRF137
BLF245B,112 BLF245B NXP Semiconductors BLF245B vs BLF245B,112
BLF245 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLF245B vs BLF245
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc BLF245B vs MRF137
BLF245,112 BLF245 NXP Semiconductors BLF245B vs BLF245,112
934003520112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF245B vs 934003520112
MRF137 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC BLF245B vs MRF137
Part Number Description Manufacturer Compare
BLF245 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLF245B vs BLF245
UFT30-28 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc BLF245B vs UFT30-28
DU2810S RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM BLF245B vs DU2810S
UF2820P RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM BLF245B vs UF2820P
BLF245B,112 BLF245B NXP Semiconductors BLF245B vs BLF245B,112
VFT30-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLF245B vs VFT30-28
933817040112 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF245B vs 933817040112
BLF244,112 BLF244 NXP Semiconductors BLF245B vs BLF244,112
SD2903 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, M229, 5 PIN STMicroelectronics BLF245B vs SD2903
BLF245,112 BLF245 NXP Semiconductors BLF245B vs BLF245,112

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