Part Details for BLF245B,112 by NXP Semiconductors
Overview of BLF245B,112 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Renewable Energy
Telecommunications
Entertainment and Gaming
Price & Stock for BLF245B,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2763
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Newark | Blf245B/Cdfm4/Tube-Bulk// Rohs Compliant: Yes |Nxp BLF245B,112 Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLF245B,112
BLF245B,112 CAD Models
BLF245B,112 Part Data Attributes:
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BLF245B,112
NXP Semiconductors
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Datasheet
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Compare Parts:
BLF245B,112
NXP Semiconductors
BLF245B
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | DFM | |
| Package Description | SOT-279A, 4 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | SOT279A | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Power Gain-Min (Gp) | 14 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLF245B,112
This table gives cross-reference parts and alternative options found for BLF245B,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF245B,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MRF137 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | MACOM | BLF245B,112 vs MRF137 |
| BLF245B | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power | NXP Semiconductors | BLF245B,112 vs BLF245B |
| BLF245C | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power | NXP Semiconductors | BLF245B,112 vs BLF245C |
| BLF245,112 | BLF245 | NXP Semiconductors | BLF245B,112 vs BLF245,112 |