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RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
974-BLF245
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Mouser Electronics | RF MOSFET Transistors RF Transistor RoHS: Compliant | 59 |
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$47.7100 / $58.3200 | Buy Now |
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BLF245
Advanced Semiconductor Inc
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Datasheet
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BLF245
Advanced Semiconductor Inc
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, O-CRFM-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Advanced Semiconductor, Inc. | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 6 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRFM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 68 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BLF245. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF245, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MRF137 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | MACOM | BLF245 vs MRF137 |
BLF245B | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power | NXP Semiconductors | BLF245 vs BLF245B |
BLF245C | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power | NXP Semiconductors | BLF245 vs BLF245C |
BLF245,112 | BLF245 | NXP Semiconductors | BLF245 vs BLF245,112 |