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Transistors / RF Power Field-Effect Transistors / UF2820P
Datasheets
UF2820P by:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for UF2820P by MACOM

Overview of UF2820P by MACOM

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Telecommunications Automotive

Price & Stock for UF2820P

Part # Distributor Description Stock Price Buy
DISTI # 1465-1211-ND
DigiKey RF MOSFET 28V Min Qty: 1 Lead time: 24 Weeks Container: Tray 21
In Stock
  • 1 $112.2500
  • 20 $106.4530
$106.4530 / $112.2500 Buy Now
DISTI # 937-UF2820P
Mouser Electronics RF MOSFET Transistors Transistor,Mosfet,20W,28V,100-500MHz RoHS: Compliant 0
  • 1 $109.2900
  • 10 $106.2200
  • 20 $102.5100
  • 60 $101.8400
$101.8400 / $109.2900 Order Now
DISTI # UF2820P
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 40 0
  • 40 $86.0400
$86.0400 Buy Now

Part Details for UF2820P

UF2820P Part Data Attributes:

Parametric Data
UF2820P MACOM
Buy Now Datasheet
Compare Parts:
UF2820P MACOM RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 2.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.8 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 53 W
Power Dissipation-Max (Abs) 53 W
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for UF2820P

This table gives cross-reference parts and alternative options found for UF2820P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UF2820P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 412-01, 4 PIN Motorola Mobility LLC UF2820P vs MRF166W
MRF136Y 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 319B-02, 4 PIN TE Connectivity UF2820P vs MRF136Y
933817040112 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors UF2820P vs 933817040112
BLF245B TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power NXP Semiconductors UF2820P vs BLF245B
DU2840V RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM UF2820P vs DU2840V
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM UF2820P vs MRF137
MRF171A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM UF2820P vs MRF171A
VFT15-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc UF2820P vs VFT15-28
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 412-01, 4 PIN TE Connectivity UF2820P vs MRF166W
DU2820S RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM UF2820P vs DU2820S

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