Datasheets
BLF244,112 by: NXP Semiconductors

BLF244

Part Details for BLF244,112 by NXP Semiconductors

Overview of BLF244,112 by NXP Semiconductors

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Applications Consumer Electronics

Price & Stock for BLF244,112

Part # Distributor Description Stock Price Buy
DISTI # 70R2761
Newark Blf244/Crfm4/Tube-Bulk// Rohs Compliant: Yes |Nxp BLF244,112 Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for BLF244,112

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BLF244,112 Part Data Attributes:

BLF244,112 NXP Semiconductors
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Compare Parts:
BLF244,112 NXP Semiconductors BLF244
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description CERAMIC, SOT-123A, 4 PIN
Pin Count 2
Manufacturer Package Code SOT123A
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 38 W
Power Dissipation-Max (Abs) 38 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF244,112

This table gives cross-reference parts and alternative options found for BLF244,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF244,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
933817040112 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF244,112 vs 933817040112
MRF136Y RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319B-02, 4 PIN MACOM BLF244,112 vs MRF136Y
MRF136Y 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 319B-02, 4 PIN TE Connectivity BLF244,112 vs MRF136Y
MRF136 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity BLF244,112 vs MRF136
MRF136 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN Motorola Mobility LLC BLF244,112 vs MRF136
Part Number Description Manufacturer Compare
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 412-01, 4 PIN Motorola Mobility LLC BLF244,112 vs MRF166W
MRF136Y 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 319B-02, 4 PIN TE Connectivity BLF244,112 vs MRF136Y
933817040112 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF244,112 vs 933817040112
BLF245B TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-279A, 4 PIN, FET RF Power NXP Semiconductors BLF244,112 vs BLF245B
DU2840V RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM BLF244,112 vs DU2840V
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM BLF244,112 vs MRF137
MRF171A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM BLF244,112 vs MRF171A
VFT15-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc BLF244,112 vs VFT15-28
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 412-01, 4 PIN TE Connectivity BLF244,112 vs MRF166W
DU2820S RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM BLF244,112 vs DU2820S

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