BLF245B
vs
BLF244,112
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Part Package Code |
SOT
|
SOT
|
Package Description |
SOT-279A, 4 PIN
|
CERAMIC, SOT-123A, 4 PIN
|
Pin Count |
4
|
2
|
Manufacturer Package Code |
SOT279A
|
SOT123A
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.75
|
8541.29.00.75
|
Additional Feature |
HIGH RELIABILITY
|
LOW NOISE, HIGH RELIABILITY
|
Case Connection |
SOURCE
|
ISOLATED
|
Configuration |
COMMON SOURCE, 2 ELEMENTS
|
SINGLE
|
DS Breakdown Voltage-Min |
65 V
|
65 V
|
Drain Current-Max (ID) |
4.5 A
|
3 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code |
R-CDFM-F4
|
O-CRFM-F4
|
Number of Elements |
2
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
75 W
|
38 W
|
Power Dissipation-Max (Abs) |
75 W
|
38 W
|
Power Gain-Min (Gp) |
14 dB
|
13 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
RADIAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
|
|
|
Compare BLF245B with alternatives
Compare BLF244,112 with alternatives