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Part Details for IPB64N25S320ATMA1 by Infineon Technologies AG
Overview of IPB64N25S320ATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPB64N25S320ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9030
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Newark | Mosfet, N-Ch, 250V, 64A, 175Deg C, 300W, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB64N25S320ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3612 |
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$2.7700 | Buy Now |
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DISTI #
86AK5181
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Newark | Mosfet, N-Ch, 250V, 64A, To-263 Rohs Compliant: Yes |Infineon IPB64N25S320ATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$3.2700 / $3.3700 | Buy Now |
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DISTI #
IPB64N25S320ATMA1CT-ND
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DigiKey | MOSFET N-CH 250V 64A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4117 In Stock |
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$3.1418 / $6.4500 | Buy Now |
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DISTI #
IPB64N25S320ATMA1
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Avnet Americas | Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IPB64N25S320ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 2000 |
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$3.7377 | Buy Now |
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DISTI #
13AC9030
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Avnet Americas | Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 13AC9030) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Ammo Pack | 908 Partner Stock |
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$4.6600 / $6.6800 | Buy Now |
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DISTI #
726-IPB64N25S320ATMA
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Mouser Electronics | MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant | 48 |
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$3.2700 / $6.4500 | Buy Now |
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Future Electronics | IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG‐TO-263‐3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 15000Reel |
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$2.8400 | Buy Now |
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Rochester Electronics | IPB64N25S3-20 - 250V, N-Ch, Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 76638 |
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$2.9900 / $3.5200 | Buy Now |
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Ameya Holding Limited | Min Qty: 5 | 40 |
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$7.5965 / $8.0737 | Buy Now |
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Ameya Holding Limited | IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG‐TO-263‐3 | 3355 |
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RFQ |
Part Details for IPB64N25S320ATMA1
IPB64N25S320ATMA1 CAD Models
IPB64N25S320ATMA1 Part Data Attributes:
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IPB64N25S320ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB64N25S320ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 270 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 256 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB64N25S320ATMA1
This table gives cross-reference parts and alternative options found for IPB64N25S320ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB64N25S320ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB64N25S3-20 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | IPB64N25S320ATMA1 vs IPB64N25S3-20 |
| IPB200N25N3G | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB64N25S320ATMA1 vs IPB200N25N3G |
| IPB200N25N3GATMA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB64N25S320ATMA1 vs IPB200N25N3GATMA1 |