Part Details for IXTT64N25P by IXYS Corporation
Overview of IXTT64N25P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTT64N25P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTT64N25P
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Mouser Electronics | MOSFET 64 Amps 250V 0.049 Rds | 0 |
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$5.9800 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$4.9300 | Buy Now |
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DISTI #
IXTT64N25P
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TTI | MOSFET 64 Amps 250V 0.049 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$4.6300 | Buy Now |
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DISTI #
IXTT64N25P
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TME | Transistor: N-MOSFET, PolarHT™, unipolar, 250V, 64A, 400W, TO268 Min Qty: 1 | 0 |
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$5.3000 / $7.4200 | RFQ |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 8 |
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$2.2500 / $3.4600 | Buy Now |
Part Details for IXTT64N25P
IXTT64N25P CAD Models
IXTT64N25P Part Data Attributes:
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IXTT64N25P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTT64N25P
IXYS Corporation
Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTT64N25P
This table gives cross-reference parts and alternative options found for IXTT64N25P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT64N25P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB200N25N3G | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPB200N25N3G |
| IPP200N25N3GXKSA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPP200N25N3GXKSA1 |
| IPI200N25N3GAKSA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPI200N25N3GAKSA1 |
| IXTT64N25P | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTT64N25P vs IXTT64N25P |
| IPB200N25N3GATMA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPB200N25N3GATMA1 |
| IPP220N25NFD | Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPP220N25NFD |
| FQA62N25C_NL | Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | IXTT64N25P vs FQA62N25C_NL |
| IPB64N25S320ATMA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 | Infineon Technologies AG | IXTT64N25P vs IPB64N25S320ATMA1 |
| IXTK62N25 | Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | IXTT64N25P vs IXTK62N25 |
| IPP200N25N3G | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXTT64N25P vs IPP200N25N3G |