Datasheets
IPB200N25N3G by: Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB200N25N3G by Infineon Technologies AG

Overview of IPB200N25N3G by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPB200N25N3G

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 12
  • 1 $8.7600
  • 2 $5.8400
  • 5 $4.3800
$4.3800 / $8.7600 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 2376
  • 1 $13.1700
  • 124 $7.2435
  • 277 $6.5850
$6.5850 / $13.1700 Buy Now
Win Source Electronics OptiMOSTM3 Power-Transistor 86235
  • 12 $4.2400
  • 29 $3.4790
  • 45 $3.3700
  • 62 $3.2610
  • 80 $3.1530
  • 107 $2.8270
$2.8270 / $4.2400 Buy Now

Part Details for IPB200N25N3G

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IPB200N25N3G Part Data Attributes:

IPB200N25N3G Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB200N25N3G Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 256 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB200N25N3G

This table gives cross-reference parts and alternative options found for IPB200N25N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N25N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPB200N25N3G vs IPB64N25S320ATMA1
IPB64N25S3-20 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG IPB200N25N3G vs IPB64N25S3-20
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPB200N25N3GATMA1
Part Number Description Manufacturer Compare
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPP200N25N3GXKSA1
IPI200N25N3GAKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPI200N25N3GAKSA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IPB200N25N3G vs IXTT64N25P
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPB200N25N3GATMA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IPB200N25N3G vs IXTT64N25P
IPP220N25NFD Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPP220N25NFD
FQA62N25C_NL Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN Fairchild Semiconductor Corporation IPB200N25N3G vs FQA62N25C_NL
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPB200N25N3G vs IPB64N25S320ATMA1
IXTK62N25 Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN Littelfuse Inc IPB200N25N3G vs IXTK62N25
IPP200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3G vs IPP200N25N3G

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