Datasheets
IPP220N25NFD by: Infineon Technologies AG

Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP220N25NFD by Infineon Technologies AG

Overview of IPP220N25NFD by Infineon Technologies AG

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Price & Stock for IPP220N25NFD

Part # Distributor Description Stock Price Buy
DISTI # 726-IPP220N25NFD
Mouser Electronics MOSFET N-Ch 250V 61A TO220-3 RoHS: Compliant 537
  • 1 $6.8800
  • 10 $5.9000
  • 25 $5.3500
  • 100 $4.9100
  • 250 $4.6200
  • 500 $4.3300
  • 1,000 $3.9000
$3.9000 / $6.8800 Buy Now
DISTI # TMOSP12804
Rutronik N-CH 250V 61A 22.0mOHM TO220 RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Tube Stock DE - 500
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 500 $4.2800
  • 1,000 $4.0400
  • 1,500 $3.8000
  • 2,500 $3.4300
  • 3,500 $3.3100
$3.3100 / $4.2800 Buy Now

Part Details for IPP220N25NFD

IPP220N25NFD CAD Models

IPP220N25NFD Part Data Attributes:

IPP220N25NFD Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPP220N25NFD Infineon Technologies AG Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 610 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 61 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 244 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPP220N25NFD

This table gives cross-reference parts and alternative options found for IPP220N25NFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP220N25NFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPP200N25N3GXKSA1
IPP220N25NFDAKSA1 Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPP220N25NFDAKSA1
IPP200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPP200N25N3G
Part Number Description Manufacturer Compare
IPB200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPB200N25N3G
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPP200N25N3GXKSA1
IPI200N25N3GAKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPI200N25N3GAKSA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IPP220N25NFD vs IXTT64N25P
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPB200N25N3GATMA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IPP220N25NFD vs IXTT64N25P
FQA62N25C_NL Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN Fairchild Semiconductor Corporation IPP220N25NFD vs FQA62N25C_NL
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPP220N25NFD vs IPB64N25S320ATMA1
IXTK62N25 Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN Littelfuse Inc IPP220N25NFD vs IXTK62N25
IPP200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP220N25NFD vs IPP200N25N3G

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