IPB64N25S320ATMA1 vs IPI200N25N3GAKSA1 feature comparison

IPB64N25S320ATMA1 Infineon Technologies AG

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IPI200N25N3GAKSA1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description TO-263-3/2 GREEN, PLASTIC, TO-262, 3 PIN
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 17 Weeks 52 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 270 mJ 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 64 A 64 A
Drain-source On Resistance-Max 0.02 Ω 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A 256 A
Reference Standard AEC-Q101
Surface Mount YES NO
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code TO-262AA
Pin Count 3
Operating Temperature-Max 175 °C
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPB64N25S320ATMA1 with alternatives

Compare IPI200N25N3GAKSA1 with alternatives