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Transistors / Power Field-Effect Transistors / IPB200N25N3GATMA1
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IPB200N25N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB200N25N3GATMA1 by Infineon Technologies AG

Overview of IPB200N25N3GATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPB200N25N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1433
Newark Mosfet, N-Ch, 250V, 64A, To-263- 3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 34151
  • 1 $5.1000
  • 10 $4.6800
  • 25 $4.6800
  • 50 $4.6800
  • 100 $4.6800
  • 250 $4.6800
  • 500 $4.3200
$4.3200 / $5.1000 Buy Now
DISTI # 86AK5173
Newark Mosfet, N-Ch, 250V, 64A, To-263 Rohs Compliant: Yes |Infineon IPB200N25N3GATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $4.5000
  • 2,000 $4.3600
$4.3600 / $4.5000 Buy Now
DISTI # IPB200N25N3GATMA1CT-ND
DigiKey MOSFET N-CH 250V 64A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2396
In Stock
  • 1 $7.8900
  • 10 $6.7630
  • 100 $5.6359
  • 500 $4.9728
  • 1,000 $4.4756
  • 2,000 $4.1938
$4.1938 / $7.8900 Buy Now
DISTI # IPB200N25N3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 2000
  • 1,000 $5.0877
$5.0877 Buy Now
DISTI # 79X1433
Avnet Americas Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 79X1433) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 5281 Partner Stock
  • 1 $8.2100
  • 10 $7.0300
  • 25 $6.6500
  • 50 $6.2500
  • 100 $5.8700
$5.8700 / $8.2100 Buy Now
DISTI # 726-IPB200N25N3GATMA
Mouser Electronics MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant 9134
  • 1 $7.8900
  • 10 $6.7600
  • 25 $6.5100
  • 100 $5.6400
  • 250 $5.5700
  • 500 $4.9700
  • 1,000 $4.1000
  • 2,000 $4.0000
$4.0000 / $7.8900 Buy Now
Future Electronics Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 9000
Reel
  • 1,000 $4.1900
$4.1900 Buy Now
Future Electronics Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 1000
Reel
  • 1,000 $3.1700
$3.1700 Buy Now
Quest Components   12
  • 1 $8.7600
  • 2 $5.8400
  • 5 $4.3800
$4.3800 / $8.7600 Buy Now
DISTI # IPB200N25N3GATMA1
TME Transistor: N-MOSFET, unipolar, 250V, 64A, 300W, PG-TO263-3 Min Qty: 1 0
  • 1 $11.4100
  • 5 $9.8400
  • 25 $7.8900
  • 100 $6.8600
$6.8600 / $11.4100 RFQ
Ameya Holding Limited Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK 6304
RFQ
Chip 1 Exchange INSTOCK 1500
RFQ
DISTI # SP000677896
EBV Elektronik Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 127000
Buy Now
GlobX GmbH Stock Germany, Full labels, from Distributor, Factory Sealed, Date Code: 22+ 15247
RFQ
New Advantage Corporation Single N-Channel 250 V 20 mOhm 64 nC OptiMOS� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1000 9000
  • 1,000 $5.8700
  • 9,000 $5.4800
$5.4800 / $5.8700 Buy Now

Part Details for IPB200N25N3GATMA1

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IPB200N25N3GATMA1 Part Data Attributes:

Parametric Data
IPB200N25N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB200N25N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB200N25N3GATMA1

This table gives cross-reference parts and alternative options found for IPB200N25N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N25N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPB200N25N3GATMA1 vs IPB64N25S320ATMA1
IPB64N25S3-20 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPB64N25S3-20
IPB200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPB200N25N3G
Part Number Description Manufacturer Compare
IPB200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPB200N25N3G
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPP200N25N3GXKSA1
IPI200N25N3GAKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPI200N25N3GAKSA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IPB200N25N3GATMA1 vs IXTT64N25P
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IPB200N25N3GATMA1 vs IXTT64N25P
IPP220N25NFD Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPP220N25NFD
FQA62N25C_NL Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN Fairchild Semiconductor Corporation IPB200N25N3GATMA1 vs FQA62N25C_NL
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPB200N25N3GATMA1 vs IPB64N25S320ATMA1
IXTK62N25 Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN Littelfuse Inc IPB200N25N3GATMA1 vs IXTK62N25
IPP200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB200N25N3GATMA1 vs IPP200N25N3G

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