Part Details for IPI200N25N3GAKSA1 by Infineon Technologies AG
Overview of IPI200N25N3GAKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPI200N25N3GAKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPI200N25 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 450 |
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$4.2600 / $5.0100 | Buy Now |
DISTI #
IPI200N25N3GAKSA1
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TME | Transistor: N-MOSFET, unipolar, 250V, 88A, 300W, PG-TO262-3 Min Qty: 1 | 0 |
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$4.0200 / $6.7000 | RFQ |
Part Details for IPI200N25N3GAKSA1
IPI200N25N3GAKSA1 CAD Models
IPI200N25N3GAKSA1 Part Data Attributes:
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IPI200N25N3GAKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPI200N25N3GAKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-262AA | |
Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 256 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPI200N25N3GAKSA1
This table gives cross-reference parts and alternative options found for IPI200N25N3GAKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI200N25N3GAKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPI200N25N3G | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI200N25N3GAKSA1 vs IPI200N25N3G |