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Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB64N25S3-20
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Mouser Electronics | MOSFETs N-Ch 250V 64A D2PAK-2 RoHS: Compliant | 6378 |
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$3.3200 / $6.4500 | Buy Now |
DISTI #
79005662
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Verical | Trans MOSFET N-CH 250V 64A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 13 Package Multiple: 1 Date Code: 2301 | Americas - 1000 |
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$5.1113 / $6.2457 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 800 |
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$5.9490 / $11.8980 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 75 |
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$3.2370 / $7.4700 | Buy Now |
DISTI #
TMOSP11169
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Rutronik | N-CH 250V 64A 20mOhm TO263-3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Stock DE - 1000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$4.0800 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 1000 |
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$3.9660 / $9.5450 | Buy Now |
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LCSC | 250V 64A 17.5m10V64A 300W 4V270uA 1 N-Channel TO-263-2 MOSFETs ROHS | 10 |
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$5.0523 / $5.3789 | Buy Now |
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IPB64N25S3-20
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB64N25S3-20
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-263, 3/2 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 270 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 256 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB64N25S3-20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB64N25S3-20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB200N25N3G | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB64N25S3-20 vs IPB200N25N3G |
IPB64N25S320ATMA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 | Infineon Technologies AG | IPB64N25S3-20 vs IPB64N25S320ATMA1 |