IPB64N25S3-20 vs IXTT64N25P feature comparison

IPB64N25S3-20 Infineon Technologies AG

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IXTT64N25P Littelfuse Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG LITTELFUSE INC
Package Description GREEN, PLASTIC, TO-263, 3/2 PIN SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon LITTELFUSE
Avalanche Energy Rating (Eas) 270 mJ 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 64 A 64 A
Drain-source On Resistance-Max 0.02 Ω 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-268AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A 160 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Feedback Cap-Max (Crss) 155 pF
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Transistor Application SWITCHING

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