Datasheets
FDA59N25 by:

Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, 450-TUBE

Part Details for FDA59N25 by onsemi

Overview of FDA59N25 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDA59N25

Part # Distributor Description Stock Price Buy
DISTI # 04M9075
Newark Mosfet, N, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:392W, Msl:-Rohs Compliant: Yes |Onsemi FDA59N25 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 678
  • 1 $4.0300
  • 10 $3.7700
  • 25 $3.5200
  • 50 $3.2600
  • 100 $3.0600
  • 250 $2.8500
$2.8500 / $4.0300 Buy Now
DISTI # FDA59N25-ND
DigiKey MOSFET N-CH 250V 59A TO3PN Min Qty: 1 Lead time: 21 Weeks Container: Tube 789
In Stock
  • 1 $3.5500
  • 30 $2.8097
  • 120 $2.4083
  • 510 $2.1407
  • 1,020 $1.8330
  • 2,010 $1.7260
  • 5,010 $1.6559
$1.6559 / $3.5500 Buy Now
DISTI # FDA59N25
Avnet Americas Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Tube 0
  • 30 $1.9606
  • 40 $1.9076
  • 70 $1.8546
  • 150 $1.8016
  • 300 $1.7486
  • 1,500 $1.6956
  • 3,000 $1.6426
$1.6426 / $1.9606 Buy Now
DISTI # 512-FDA59N25
Mouser Electronics MOSFET 250V N-Ch MOSFET RoHS: Compliant 26060
  • 1 $3.5200
  • 10 $3.1600
  • 25 $2.7800
  • 100 $2.3600
  • 250 $2.1900
  • 450 $1.9100
  • 900 $1.6500
$1.6500 / $3.5200 Buy Now
Future Electronics Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $1.7100
  • 900 $1.6800
  • 1,350 $1.6700
  • 1,800 $1.6600
  • 2,250 $1.6200
$1.6200 / $1.7100 Buy Now
Future Electronics Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $1.7100
  • 900 $1.6800
  • 1,350 $1.6700
  • 1,800 $1.6600
  • 2,250 $1.6200
$1.6200 / $1.7100 Buy Now
DISTI # FDA59N25
TME Transistor: N-MOSFET, unipolar, 250V, 35A, Idm: 236A, 392W, TO3PN Min Qty: 1 11
  • 1 $3.7900
  • 5 $3.4100
  • 30 $3.0100
  • 120 $2.7100
$2.7100 / $3.7900 Buy Now
DISTI # FDA59N25
Avnet Silica Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 22 Weeks, 0 Days Silica - 330
Buy Now
DISTI # FDA59N25
EBV Elektronik Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 270
  • 90 $2.6000
  • 270 $2.4200
$2.4200 / $2.6000 Buy Now

Part Details for FDA59N25

FDA59N25 CAD Models

FDA59N25 Part Data Attributes:

FDA59N25 onsemi
Buy Now Datasheet
Compare Parts:
FDA59N25 onsemi Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description TO-3P, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 58 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 1458 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 59 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 392 W
Pulsed Drain Current-Max (IDM) 236 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA59N25

This table gives cross-reference parts and alternative options found for FDA59N25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA59N25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTQ64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc FDA59N25 vs IXTQ64N25P
IXTQ64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation FDA59N25 vs IXTQ64N25P
Part Number Description Manufacturer Compare
IPB200N25N3G Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG FDA59N25 vs IPB200N25N3G
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FDA59N25 vs IPP200N25N3GXKSA1
IPI200N25N3GAKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG FDA59N25 vs IPI200N25N3GAKSA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc FDA59N25 vs IXTT64N25P
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG FDA59N25 vs IPB200N25N3GATMA1
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation FDA59N25 vs IXTT64N25P
IPP220N25NFD Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FDA59N25 vs IPP220N25NFD
FQA62N25C_NL Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN Fairchild Semiconductor Corporation FDA59N25 vs FQA62N25C_NL
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG FDA59N25 vs IPB64N25S320ATMA1
IXTK62N25 Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN Littelfuse Inc FDA59N25 vs IXTK62N25

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