Part Details for IXFH32N50S by IXYS Corporation
Overview of IXFH32N50S by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for IXFH32N50S
IXFH32N50S CAD Models
IXFH32N50S Part Data Attributes:
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IXFH32N50S
IXYS Corporation
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Datasheet
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IXFH32N50S
IXYS Corporation
Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 360 W | |
| Pulsed Drain Current-Max (IDM) | 128 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH32N50S
This table gives cross-reference parts and alternative options found for IXFH32N50S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH32N50S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT32N50 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXYS Corporation | IXFH32N50S vs IXFT32N50 |
| APT6030BVFRG | Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | IXFH32N50S vs APT6030BVFRG |
| APT5016BLLG | Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH32N50S vs APT5016BLLG |
| APT6029SLLG | Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFH32N50S vs APT6029SLLG |
| IRFBA32N50KPBF | Power Field-Effect Transistor, 32A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-220, 4 PIN | Infineon Technologies AG | IXFH32N50S vs IRFBA32N50KPBF |
| IXFQ26N50Q | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXFH32N50S vs IXFQ26N50Q |
| APT5015BVRG | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFH32N50S vs APT5015BVRG |
| APT5015SVFRG | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFH32N50S vs APT5015SVFRG |
| IXTT28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFH32N50S vs IXTT28N50Q |
| IXFJ32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, I3PAK-3 | IXYS Corporation | IXFH32N50S vs IXFJ32N50Q |