Part Details for IXFJ32N50Q by IXYS Corporation
Overview of IXFJ32N50Q by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Aerospace and Defense
Smart Cities
Agriculture Technology
Renewable Energy
Robotics and Drones
Part Details for IXFJ32N50Q
IXFJ32N50Q CAD Models
IXFJ32N50Q Part Data Attributes:
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IXFJ32N50Q
IXYS Corporation
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Datasheet
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IXFJ32N50Q
IXYS Corporation
Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, I3PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 360 W | |
| Pulsed Drain Current-Max (IDM) | 128 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFJ32N50Q
This table gives cross-reference parts and alternative options found for IXFJ32N50Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFJ32N50Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH32N50S | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXYS Corporation | IXFJ32N50Q vs IXFH32N50S |
| APT5015BLC | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Advanced Power Technology | IXFJ32N50Q vs APT5015BLC |
| IXFH26N49Q | Power Field-Effect Transistor, 26A I(D), 490V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFJ32N50Q vs IXFH26N49Q |
| APT6029SFLLG | Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | IXFJ32N50Q vs APT6029SFLLG |
| APT6029SLLG | Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFJ32N50Q vs APT6029SLLG |
| APT5016BLLG | Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFJ32N50Q vs APT5016BLLG |
| IXTH30N45S | Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN | IXYS Corporation | IXFJ32N50Q vs IXTH30N45S |
| IXFT32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFJ32N50Q vs IXFT32N50Q |
| IXFQ26N50Q | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXFJ32N50Q vs IXFQ26N50Q |
| APT5020BLC | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Advanced Power Technology | IXFJ32N50Q vs APT5020BLC |